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| KSA1201 KSA1201 Power Amplifier * * * * Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 1 SOT-89 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC* TJ TSTG Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -800 -160 500 1,000 150 -55 ~ 150 Units V V V mA mA mW mW C C * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -120V, IE=0 VBE= -5V, IC=0 VCE= -5V, IC= -100mA IC= -500mA, IB=-50mA VCE= -5V, IC= -500mA VCE= -5V, IC= -100mA VCB= -10V, IE=0, f=1MHz 120 30 80 Min. -120 -5 -100 -100 240 -1.0 -1.0 V V MHz pF Typ. Max. Units V V nA nA hFE Classification Classification hFE O 80 ~ 160 Marking Y 120 ~ 240 SDX hFE grade (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1201 Typical Characteristics -0.8 1000 IB =-10mA IB =-7mA VCE = -5V IC[A], COLLECTOR CURRENT IB =-4mA -0.4 hFE, DC CURRENT GAIN -0.6 IB =-5mA IB =-3mA IB =-2mA 100 -0.2 IB =-1mA IB =0 -0 -4 -8 -12 -16 10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -1 -1.0 VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB VCE = -5V IC[A], COLLECTOR CURRENT -0.8 -0.6 -0.1 -0.4 -0.2 -0.01 -1 -10 -100 -1000 0 -0.2 -0.4 -0.6 -0.8 -1.0 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10000 Ta=25 C Single Pulse IC[mA], COLLECTOR CURRENT -1000 o 1.6 1.4 ICMAX(DC) PC[W], POWER DISSIPATION ICMAX(Pulse) 1.2 s 1m s m 10 1.0 M ou s 0m 10 nt ed -100 0.8 on Ce ra 0.6 m ic Bo a rd VCEOMAX -10 0.4 (2 5 0m m X0 . 2 0.2 8m m ) 150 175 200 -1 -0.1 -1 -10 -100 -1000 0 25 50 o 75 100 125 VCE[V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSA1201 Package Dimensions SOT-89 4.50 0.20 1.65 0.10 C0.2 (0.50) 1.50 0.20 (0.40) 0.20 2.50 0.50 0.10 1.50 TYP 1.50 TYP 0.40 0.10 0.40 +0.10 -0.05 (1.10) 4.10 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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